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| Transistor 2SC2405, 2SC2406 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SA1034 and 2SA1035 Unit: mm s Features q q q 2.9 -0.05 Parameter Collector to base voltage Collector to 2SC2405 2SC2406 2SC2405 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 35 55 35 55 5 100 50 200 150 -55 ~ +150 Unit +0.2 1.1 -0.1 2 V emitter voltage 2SC2406 Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V mA mA mW C C 1:Base 2:Emitter 3:Collector JEDEC:TO-236 EIAJ:SC-59 Mini Type Package Marking symbol : S(2SC2405) T(2SC2406) s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SC2405 2SC2406 2SC2405 2SC2406 (Ta=25C) Symbol ICBO ICEO VCBO VCEO VEBO hFE* VCE(sat) VBE fT NV Conditions VCB = 10V, IE = 0 VCE = 10V, IB = 0 IC = 10A, IE = 0 IC = 2mA, IB = 0 IE = 10A, IC = 0 VCB = 5V, IE = -2mA IC = 100mA, IB = 10mA VCE = 1V, IC = 100mA VCB = 5V, IE = -2mA, f = 200MHz VCE = 10V, IC = 1mA, GV = 80dB Rg = 100k, Function = FLAT 0.7 200 110 35 55 35 55 5 180 700 0.6 1 V V MHz mV min typ max 100 1 Unit nA A V 0 to 0.1 0.1 to 0.3 0.40.2 0.8 0.16 -0.06 +0.1 0.4 -0.05 +0.1 s Absolute Maximum Ratings 1.90.2 Low noise voltage NV. High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25C) 2.8 -0.3 0.650.15 +0.2 +0.25 1.5 -0.05 0.650.15 0.95 1 +0.2 0.95 3 1.45 V V Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Noise voltage *h FE Rank classification Rank hFE R 180 ~ 360 SR TR S 260 ~ 520 SS TS T 360 ~ 700 ST TT Marking Symbol 2SC2405 2SC2406 1 Transistor PC -- Ta 250 160 140 2SC2405, 2SC2406 IC -- VCE Ta=25C 160 VCE=5V Ta=25C 140 IB=350A 300A 100 250A 80 60 40 02 0 200A 150A 100A IC -- I B Collector power dissipation PC (mW) 225 Collector current IC (mA) 120 Collector current IC (mA) 200 175 150 125 100 75 50 25 0 0 20 40 60 80 100 120 140 160 120 100 80 60 40 20 0 50A 0 2 4 6 8 10 12 0 0.1 0.2 0.3 0.4 0.5 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base current IB (mA) IC -- VBE Collector to emitter saturation voltage VCE(sat) (V) 120 25C 100 VCE=5V 100 30 10 3 1 0.3 0.1 0.03 0.01 0.1 VCE(sat) -- IC IC/IB=10 1000 900 800 700 600 500 400 300 200 100 0 0.1 hFE -- IC VCE=5V Collector current IC (mA) Ta=75C 80 -25C 60 Forward current transfer ratio hFE Ta=75C 25C -25C 40 25C Ta=75C 20 -25C 0 0 0.4 0.8 1.2 1.6 2.0 0.3 1 3 10 30 100 0.3 1 3 10 30 100 Base to emitter voltage VBE (V) Collector current IC (mA) Collector current IC (mA) fT -- IE 500 450 Cob -- VCB Collector output capacitance Cob (pF) VCB=5V Ta=25C 10 9 8 7 6 5 4 3 2 1 0 0.1 IE=0 f=1MHz Ta=25C 160 140 NV -- VCE IC=1mA GV=80dB Function=FLAT Rg=100k 100 80 60 40 20 0 22k Transition frequency fT (MHz) Noise voltage NV (mV) 400 350 300 250 200 150 100 50 0 - 0.1 - 0.3 120 4.7k -1 -3 -10 -30 -100 0.3 1 3 10 30 100 1 3 10 30 100 Emitter current IE (mA) Collector to base voltage VCB (V) Collector to emitter voltage VCE (V) 2 Transistor NV -- VCE 300 Rg=100k 160 140 VCE=10V GV=80dB Function=FLAT 2SC2405, 2SC2406 NV -- IC 300 VCE=10V GV=80dB Function=RIAA NV -- IC Noise voltage NV (mV) Noise voltage NV (mV) IC=1mA GV=80dB Function=RIAA 180 120 100 80 60 22k 40 4.7k 20 0 0.01 Rg=100k Noise voltage NV (mV) 240 240 180 120 22k 60 4.7k 120 Rg=100k 60 22k 4.7k 0 1 3 10 30 100 0.03 0.1 0.3 1 0 0.01 0.03 0.1 0.3 1 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) NV -- Rg 160 140 VCE=10V GV=80dB Function=FLAT 300 NV -- Rg VCE=10V GV=80dB Function=RIAA Noise voltage NV (mV) 120 100 80 IC=1mA 60 40 20 0 1 3 10 30 100 0.5mA 0.1mA Noise voltage NV (mV) 240 180 IC=1mA 120 0.5mA 60 0.1mA 0 1 3 10 30 100 Signal source resistance Rg (k) Signal source resistance Rg (k) 3 |
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